31.01.2025
APT6033BN-BUTT datasheet
Скачать datasheet 04023J0R3ABSTR.pdf Файл формата Pdf (20 страниц, 397,88 kb)
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МаркировкаAPT6033BN-BUTT
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ПроизводительMicrosemi Corporation
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ОписаниеMicrosemi Corporation APT6033BN-BUTT Package Shape: RECTANGULAR Package Style: FLANGE MOUNT Terminal Form: THROUGH-HOLE Terminal Position: SINGLE Number of Terminals: 3 Package Body Material: PLASTIC/EPOXY Configuration: SINGLE WITH BUILT-IN DIODE Case Connection: DRAIN Number of Elements: 1 Transistor Element Material: SILICON Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: ENHANCEMENT Transistor Type: GENERAL PURPOSE POWER Drain Current-Max (ID): 22 A DS Breakdown Voltage-Min: 600 V Drain-source On Resistance-Max: 0.3300 ohm Pulsed Drain Current-Max (IDM): 88 A
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Количество страниц4 шт.
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ФорматPDF
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Размер файла164,67 KB
APT6033BN-BUTT datasheet скачать
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